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HiPerFETTM MOSFET
Q2-Class
(Electrically Isolated Back Surface)
IXFR 38N80Q2
VDSS ID25 RDS(on)
= = =
800 V 28 A 240 m
trr 250 ns
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force 5 g Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 800 800 30 40 28 150 38 75 4.0 20 416 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A mJ J V/ns Features W C C C C V~ V~ Double metal process for low gate resistance Silicon chip on DCB substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages Easy assembly Space savings High power density
G D Isolated Back Surface D = Drain
ISOPLUS247 (IXFR)
G = Gate S = Source
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 2.0 4.5 200 TJ = 25C TJ = 125C 50 2 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 %
240 m
(c) 2004 IXYS All rights reserved
DS99203(09/04)
IXFR 38N80Q2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 37 8340 VGS = 0 V, VDS = 25 V, f = 1 MHz 890 175 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1.0 (External), 16 60 12 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 44 88 0.3 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS247 Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 38 150 1.5 250 A A V ns C A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1 10
Notes: 1. Test current IT = 19A 2. See IXFK38N80Q2 data sheet for characteristic curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXFR 38N80Q2
Fig. 1. Output Characteristics @ 25C
40 35 30 VGS = 10V 7V 90 80 70 VGS = 10V 8V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
25 20 15 10 5 0 0 1 2 3 4 5 6
I D - Amperes
6V
60 50 40 30 20 5.5V 6V
5.5V
5V
10 0
5V
7
8
9
10
0
3
6
9
12
V D S - Volts Fig. 3. Output Characteristics @ 125C
40 35 30 VGS = 10V 7V 6V 5.5V 25 20 15 10 5 0 0 2 4 6 3.1 2.8 VGS = 10V
V D S - Volts
15
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 38A I D = 19A
I D - Amperes
5V
V D S - Volts
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
30 27
Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
2.8 2.6 VGS = 10V TJ = 125C
R D S ( o n ) - Normalized
2.4 2.2
24 21
I D - Amperes
TJ = 25C
2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30
18 15 12 9 6 3 0
I D - Amperes
40
50
60
70
80
90
-50
-25
TC - Degrees Centigrade
0
25
50
75
100
125
150
(c) 2004 IXYS All rights reserved
IXFR 38N80Q2
Fig. 7. Input Adm ittance
50 45 40 60 50 TJ = -40C 25C 125C 70
Fig. 8. Transconductance
I D - Amperes
30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 TJ = 125C 25C -40C
g f s - Siemens
35
40 30 20 10 0 0
10
20
30
40
50
60
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
120 100 80 10 9 8 7 VDS = 400V I D = 19A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 25C
6 5 4 3 2 1 0
60 40 20 0 0.4 0.5 0.6 0.7 TJ = 125C
V S D - Volts
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100 120 140 160 180 200
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 C iss TJ = 150C TC = 25C 100s 25s
Fig. 11. Capacitance
10000
Capacitance - picoFarads
I D - Amperes
100 10ms
1ms
1000
C oss
10 C rss f = 1MHz 100 0 5 10 15 20 25 30 35 40 1 10 100 1000 R DS(on) Limit DC
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXFR 38N80Q2
Fig. 13. Maxim um Transient Thermal Resistance
1.00
R( t h ) J C - C / W
0.10
0.01 1 10 100 1000
Pulse Width - milliseconds
(c) 2004 IXYS All rights reserved

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